Study of surface exfoliation induced by hydrogen implantation and annealing in GaSb (100) substrates

We investigate the surface blistering/exfoliation in H-implanted GaSb (100) substrates. Samples were implanted by 50 keV hydrogen ions with a fluence of 5 × 1016 and 1 1017 ions/cm2 at room temperature. Post-implantation annealing studies carried out up to 300 °C observe blistering. Interestingly, exfoliation over large area was observed for both fluences after post-implantation annealing. High resolution X-ray diffraction samples showed existence damage-induced strain its dependence on fluence. Microstructural investigations damage region have been using cross-sectional transmission electron microscopy. The width formation microstructures found depend which eventually guides blistering/exfoliation.